a p05n50eh/j-hf advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 500v fast switching characteristic r ds(on) 1.6 simple drive requirement i d 5a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation 4 w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 1.7 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice 201008041 storage temperature range -55 to 150 1 parameter maximum thermal resistance, junction-ambient (pcb mount) 4 parameter + 30 rating 500 halogen-free product 5 20 73.5 5 12.5 -55 to 150 2 the ap05n50 provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness. g d s to-252(h) the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for ac/dc converters. the through-hole version (ap05n50ej) is available for low-profile applications. g d s g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 500 - - v r ds(on) static drain-source on-resistance v gs =10v, i d =2a - - 1.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =2a, v gs =0 v , - 250 - ns q rr reverse recovery charge di/dt=100a/s - 1.75 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 ap05n50eh/j-hf 2 4.surface mounted on 1 in 2 copper pad of fr4 board
a p05n50eh/j-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -40 0 40 80 120 t j , junction temperature ( o c) normalized bv dss (v) 0 2 4 6 8 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =2a v g =10v 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0 0.5 1 1.5 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) i d =250ua i d =1ma
ap05n50eh/j-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =400v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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